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2MBI600VN-120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 600A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Symbols
VCES
VGES
Conditions
Inverter
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Ic
Continuous
Collector current
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Case temperature
TC
Storage temperature
Tstg
between terminal and copper base (*1)
Isolation voltage
Viso
between thermistor and others (*2)
Mounting (*3)
Screw torque
Terminals (*4)
1ms
Tc=25°C
Tc=100°C
1ms
1 device
AC : 1min.
Maximum ratings
1200
±20
750
600
1200
600
1200
3750
175
150
125
-40 to +125
Units
V
V
2500
VAC
3.5
4.5
Nm
A
W
°C
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : Mounting : 2.5-3.5 Nm (M5) Note *4: Recommendable value : Terminals : 3.5-4.5 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Inverter
Collector-Emitter saturation voltage
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
Thermistor
Forward on voltage
Symbols
Conditions
ICES
IGES
VGE (th)
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 600mA
VCE (sat)
(terminal)
VCE (sat)
(chip)
Rg(int)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
Reverse recovery time
trr
Resistance
R
B value
B
VGE = 15V
IC = 600A
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V
IC = 600A
VGE = ±15V
RG = 0.62Ω
LS = 80nH
VGE = 0V
IF = 600A
IF = 600A
T=25°C
T=100°C
T=25/50°C
1
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min.
typ.
max.
3.0
600
6.0
6.5
7.0
2.65
3.10
3.00
3.05
1.85
2.30
2.20
2.25
1.25
48
550
180
120
1050
110
2.50
3.00
2.65
2.60
1.70
2.15
1.85
1.80
200
5000
465
495
520
3305
3375
3450
Units
mA
nA
V
V
Ω
nF
nsec
V
nsec
Ω
K
7190d
MARCH 2014
2MBI600VN-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Thermal resistance characteristics
Items
Symbols
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*5)
Rth(c-f)
Conditions
Inverter IGBT
Inverter FWD
with Thermal Compound
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
Characteristics
min.
typ.
max.
0.04
0.06
0.0167
-
Units
°C/W
2MBI600VN-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
[INVERTER]
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
1400
1400
VGE=20V 15V
VGE= 20V
1200
12V
1000
Collector current: Ic [A]
800
600
10V
400
200
12V
1000
800
600
10V
400
8V
200
8V
0
0
0
1
2
3
4
0
5
1
Collector-Emitter voltage: VCE [V]
2
3
4
5
Collector-Emitter voltage: VCE [V]
[INVERTER]
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
VGE= 15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
10
1400
1000
Collector-Emitter Voltage: VCE [V]
Tj=25°C 125°C
1200
Collector Current: Ic [A]
15V
150°C
800
600
400
200
8
6
4
Ic=1200A
Ic=600A
Ic=300A
2
0
0
0
1
2
3
4
5
5
10
20
[INVERTER]
Dynamic Gate Charge (typ.)
Vcc=600V, Ic=600A, Tj= 25°C
[INVERTER]
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
VGE= 0V, ƒ= 1MHz, Tj= 25°C
800
20
1000
Gate-Emitter voltage: VGE [V]
15
100
Cies
10
Cres
Coes
1
0
5
10
15
20
25
25
Gate-Emitter Voltage: VGE [V]
Collector-Emitter Voltage: VCE [V]
Gate Capacitance: Cies, Coes, Cres [nF]
***
15
10
Collector-Emitter voltage: VCE [V]
400
5
200
0
0
-200
-5
-400
-10
-15
VGE
-20
-6000
30
600
VCE
-4000
-600
-2000
0
2000
Gate charge: Qg [nC]
3
4000
-800
6000
Collector-Emitter voltage: VCE [V]
Collector current: Ic [A]
1200
2MBI600VN-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=0.62Ω, Tj=25°C
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=0.62Ω, Tj=125°C, 150°C
10000
Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
10000
toff
1000
ton
tr
100
tf
10
0
500
1000
Tj=125oC
Tj=150oC
toff
1000
ton
tr
tf
100
10
1500
0
Collector current: Ic [A]
Switching loss: Eon, Eoff, Err [mJ/pulse]
Switching time: ton, tr, toff, tf [nsec]
tr
1000
tf
100
10
0.1
1
10
250
Tj=125oC
Tj=150oC
200
Eoff
150
100
Err
50
Eon
0
100
0
Gate resistance: Rg [Ω]
500
1000
1500
Collector current: Ic [A]
[INVERTER]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=600A, VGE=±15V, Tj=125°C, 150°C
[INVERTER]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE=15V, Rg=0.62 Ω, Tj=150°C
400
1400
Tj=125oC
Tj=150oC
1200
Eon
300
Collector current: Ic [A]
Switching loss: Eon, Eoff, Err [mJ/pulse]
1500
[INVERTER]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=0.62Ω, Tj=125°C, 150°C
toff
ton
Tj=125oC
Tj=150oC
1000
Collector current: Ic [A]
[INVERTER]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=600A, VGE=±15V, Tj=125°C, 150°C
10000
500
200
Eoff
100
0
1
10
800
Notice)
Switching characteristics of
VCE is defined between
Sense C and Sense E1 for
Upper arm and Sense E1
and Sense E2 for Lower arm.
600
400
200
Err
0
1000
0
100
Gate resistance: Rg [Ω]
0
500
1000
Collector-Emitter voltage: VCE [V]
4
1500
2MBI600VN-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER]
[INVERTER]
Reverse Recovery Characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=0.62Ω, Tj=25°C
Forward Current vs. Forward Voltage (typ.)
chip
10000
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
1400
Forward current: IF [A]
1200
Tj=25°C
1000
800
600
125°C
400
200
150°C
1000
Irr
trr
100
0
10
0
1
2
3
0
500
Forward on voltage: VF [V]
[INVERTER]
Reverse Recovery Characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=0.62Ω, Tj=125°C, 150°C
FWD
***
1000
Thermal resistanse: Rth(j-c) [°C/W]
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
0.1
Tj=125oC
Tj=150oC
Irr
trr
100
10
0
1500
Transient Thermal Resistance (max.)
10000
500
1000
1500
Forward current: IF [A]
IGBT
0.01
τ
Rth
[°C/W]
0.001
0.001
[sec]
IGBT
FWD
0.01
0.0023 0.0301 0.0598 0.0708
0.00429 0.01088 0.01537 0.00946
0.00644 0.01632 0.02305 0.01420
0.1
1
Pulse Width : Pw [sec]
[THERMISTOR]
FWD safe operating area (max.)
Tj=150°C
Temperature characteristic (typ.)
1400
Reverse recovery current: Irr [A]
100
Resistance : R [kΩ]
1000
Forward current: IF [A]
10
1
0.1
-60 -40 -20
0
20
40
60
1200
1000
600
Temperature [°C]
Notice)
Switching characteristics of
VCE is defined between Sense
C and Sense E1 for Upper arm
and Sense E1and Sense E2
for Lower arm.
400
200
0
80 100 120 140 160
Pmax=600kW
800
0
500
1000
Collector-Emitter voltage: VCE [V]
5
1500
2MBI600VN-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
N
OUT
P
Outline Drawings (Unit : mm)
Weight: 300g (typ.)
Equivalent Circuit
[ Inverter ]
C
[ Thermistor ]
P
T1
T2
G1
E1
OUT
G2
E2
N
6
2MBI600VN-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2014.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. A
ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. A lthough Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. T
he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
• Machine tools
• Audiovisual equipment
• Electrical home appliances
• Personal equipment
• Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed
below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Trunk communications equipment
• Traffic-signal control equipment
• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic
equipment (without limitation).
• Space equipment
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• Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2014 by Fuji Electric Device Technology Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before
using the product.
Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
7